2n3055 transistor pdf code#
2n3055 transistor pdf series#

These15 AMPEREdevices can also be used in power switching circuits such as relay orsolenoid drivers, dc-to-dcДЁ.9. Internal schematic dДўN3055A (NPN),MJ15015 (NPN),MJ15016 (PNP)MJ15015 and MJ15016 are Preferred DevicesComplementary SiliconHigh-Power Transistors PowerBaset complementary transistors are designed forhigh power audio, stepping motor and other linear applications.

2n3055 transistor pdf series#

It is intendedfor power switching circuits, series and shuntregulators, output stages and high fidelityamplifiers.12TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collector-BaseДўN3055MJ2955Complementary power transistorsFeatures Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose Audio Amplifier12DescriptionTO-3The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications.Figure 1. mj2955-2n3055.pdf Size:130K _motorolaДўN3055SILICON NPN TRANSISTORn SGS-THOMSON PREFERRED SALESTYPEDESCRIPTIONThe 2N3055 is a silicon epitaxial-base NPNtransistor in Jedec TO-3 metal case. designed for general purpose switching and amplifДЁ.4. Order this documentMOTOROLAby 2N3055/DSEMICONDUCTOR TECHNICAL DATANPN2N3055 *Complementary Silicon Power PNPMJ2955*Transistors. PowerBase complementary transistors designed Order this documentMOTOROLAby 2N3055A/DSEMICONDUCTOR TECHNICAL DATANPNComplementary Silicon2N3055AHigh-Power Transistors*MJ15015. All ST products are sold pursuant to STвЂ™s terms and conditions of sale.2N3055ESMDDimensions in mm (inches). STMicroelectronics NV and its subsidiaries (вЂњSTвЂќ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. MJ2955 Information in this document is provided solely in connection with ST products. Document revision history Date Revision 1 2 6 Content reworked to improve readability, no technical changes 2N3055 MJ2955 Changes. Revision history 4 Revision history Table 4. ECOPACK specifications are available at: 4/7 2N3055 MJ2955. The maximum ratings related to soldering conditions are also marked on the inner box label. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. These packages have a Lead-free second level interconnect. Symbol Parameter Collector cut-off current I CEX ( Collector cut-off current I CEO ( Emitter cut-off current I EBO ( Collector-emitter sustaining (1) V CEO(sus) voltage ( Collector-emitter sustaining ( 100 в„¦) CER(sus) voltage (R BE Collector-emitter saturation. MJ2955 2 Electrical characteristics (T = 25вЊ unless otherwise specified) case Electrical characteristics Table 3.

operating junction temperature J Note: For PNP type voltage and current values are negative 2/7 Parameter = 100 в„¦ в‰¤ 25вЊ c 2N3055 MJ2955 Value Unit NPN 2N3055 PNP MJ2955 100 115 -65 to 200 200 вЊ. P Total dissipation at T TOT T Storage temperature stg T Max. Marking Package 2N3055 TO-3 MJ2955 Rev 7 2N3055 MJ2955 1 2 TO-3 Internal schematic diagram Packaging tray 1/7 7. Complementary power transistors Figure 1.

2n3055 transistor pdf code#

Device summary Order code 2N3055 MJ2955 January 2008.